Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
Number of Pins | 3 |
Weight | 2.084002g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2005 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 370W |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 370W |
Case Connection | COLLECTOR |
Input Type | Standard |
Transistor Application | MOTOR CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 2.35V |
Max Collector Current | 78A |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 2.35V |
Turn On Time | 74 ns |
Test Condition | 400V, 30A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 30A |
Turn Off Time-Nom (toff) | 237 ns |
IGBT Type | NPT |
Gate Charge | 102nC |
Current - Collector Pulsed (Icm) | 120A |
Td (on/off) @ 25°C | 46ns/185ns |
Switching Energy | 350μJ (on), 825μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5.5V |
Fall Time-Max (tf) | 42ns |
Height | 9.652mm |
Length | 10.668mm |
Width | 4.826mm |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |