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IRGSL4062DPBF

IRGSL4062DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRGSL4062DPBF
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: PDF
  • Stock: 552
  • Description: IRGSL4062DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 250W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.95V
Max Collector Current 48A
Reverse Recovery Time 89 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.95V
Turn On Time 64 ns
Test Condition 400V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 24A
Turn Off Time-Nom (toff) 164 ns
IGBT Type Trench
Gate Charge 50nC
Current - Collector Pulsed (Icm) 96A
Td (on/off) @ 25°C 41ns/104ns
Switching Energy 115μJ (on), 600μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 41ns
Height 9.65mm
Length 10.67mm
Width 4.83mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
See Relate Datesheet

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