IRL1004PBF
| Parameters | |
|---|---|
| Turn On Delay Time | 16 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Factory Lead Time | 1 Week |
| Rds On (Max) @ Id, Vgs | 6.5m Ω @ 78A, 10V |
| Contact Plating | Tin |
| Mount | Through Hole |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Input Capacitance (Ciss) (Max) @ Vds | 5330pF @ 25V |
| Number of Pins | 3 |
| Current - Continuous Drain (Id) @ 25°C | 130A Tc |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Gate Charge (Qg) (Max) @ Vgs | 100nC @ 4.5V |
| Rise Time | 210ns |
| Packaging | Tube |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Published | 2004 |
| Vgs (Max) | ±16V |
| Series | HEXFET® |
| Part Status | Active |
| Fall Time (Typ) | 14 ns |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Turn-Off Delay Time | 25 ns |
| Number of Terminations | 3 |
| Continuous Drain Current (ID) | 130A |
| Threshold Voltage | 1V |
| Termination | Through Hole |
| JEDEC-95 Code | TO-220AB |
| ECCN Code | EAR99 |
| Gate to Source Voltage (Vgs) | 16V |
| Resistance | 6.5mOhm |
| Drain to Source Breakdown Voltage | 40V |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE |
| Pulsed Drain Current-Max (IDM) | 520A |
| Subcategory | FET General Purpose Power |
| Dual Supply Voltage | 40V |
| Avalanche Energy Rating (Eas) | 700 mJ |
| Voltage - Rated DC | 40V |
| Nominal Vgs | 1 V |
| Technology | MOSFET (Metal Oxide) |
| Height | 8.77mm |
| Current Rating | 130A |
| Length | 10.6426mm |
| Number of Elements | 1 |
| Width | 4.82mm |
| Power Dissipation-Max | 200W Tc |
| Radiation Hardening | No |
| Element Configuration | Single |
| REACH SVHC | No SVHC |
| Operating Mode | ENHANCEMENT MODE |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Power Dissipation | 200W |
| Case Connection | DRAIN |
See Relate Datesheet
