Parameters | |
---|---|
Dual Supply Voltage | 40V |
Avalanche Energy Rating (Eas) | 700 mJ |
Recovery Time | 120 ns |
Mount | Surface Mount |
Nominal Vgs | 1 V |
Mounting Type | Surface Mount |
Height | 4.83mm |
Length | 10.67mm |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Width | 9.65mm |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Radiation Hardening | No |
REACH SVHC | No SVHC |
Packaging | Tube |
RoHS Status | RoHS Compliant |
Published | 2004 |
Lead Free | Lead Free |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Resistance | 6.5MOhm |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 40V |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 130A |
Time@Peak Reflow Temperature-Max (s) | 30 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 3.8W Ta 200W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3.1W |
Case Connection | DRAIN |
Turn On Delay Time | 16 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 6.5m Ω @ 78A, 10V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 5330pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 130A Tc |
Gate Charge (Qg) (Max) @ Vgs | 100nC @ 4.5V |
Rise Time | 210ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±16V |
Fall Time (Typ) | 14 ns |
Turn-Off Delay Time | 25 ns |
Continuous Drain Current (ID) | 130A |
Threshold Voltage | 1V |
Gate to Source Voltage (Vgs) | 16V |
Drain to Source Breakdown Voltage | 40V |
Pulsed Drain Current-Max (IDM) | 520A |