Parameters | |
---|---|
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 4MOhm |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 40V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 160A |
Number of Elements | 1 |
Power Dissipation-Max | 200W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 200W |
Case Connection | DRAIN |
Turn On Delay Time | 18 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 4m Ω @ 95A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 6590pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 160A Tc |
Gate Charge (Qg) (Max) @ Vgs | 140nC @ 5V |
Rise Time | 270ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.3V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 37 ns |
Turn-Off Delay Time | 38 ns |
Continuous Drain Current (ID) | 160A |
Threshold Voltage | 3V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 40V |
Factory Lead Time | 1 Week |
Pulsed Drain Current-Max (IDM) | 640A |
Mount | Through Hole |
Avalanche Energy Rating (Eas) | 620 mJ |
Mounting Type | Through Hole |
Recovery Time | 94 ns |
Height | 15.24mm |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Length | 10.5156mm |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Width | 4.69mm |
Radiation Hardening | No |
Packaging | Tube |
REACH SVHC | No SVHC |
Published | 2004 |
RoHS Status | ROHS3 Compliant |
Series | HEXFET® |
Lead Free | Lead Free |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |