Parameters |
Factory Lead Time |
1 Week |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2006 |
Series |
HEXFET® |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Resistance |
3.1MOhm |
Terminal Finish |
Matte Tin (Sn) - with Nickel (Ni) barrier |
Additional Feature |
AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE |
Subcategory |
FET General Purpose Power |
Voltage - Rated DC |
40V |
Technology |
MOSFET (Metal Oxide) |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
75A |
Time@Peak Reflow Temperature-Max (s) |
30 |
JESD-30 Code |
R-PSSO-G2 |
Number of Elements |
1 |
Power Dissipation-Max |
230W Tc |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
230W |
Case Connection |
DRAIN |
Turn On Delay Time |
19 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
3.1m Ω @ 75A, 10V |
Vgs(th) (Max) @ Id |
2.7V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
5080pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
75A Tc |
Gate Charge (Qg) (Max) @ Vgs |
110nC @ 5V |
Rise Time |
180ns |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±16V |
Fall Time (Typ) |
49 ns |
Turn-Off Delay Time |
30 ns |
Continuous Drain Current (ID) |
75mA |
Threshold Voltage |
2.7V |
Gate to Source Voltage (Vgs) |
16V |
Drain Current-Max (Abs) (ID) |
200A |
Drain to Source Breakdown Voltage |
40V |
Pulsed Drain Current-Max (IDM) |
790A |
Avalanche Energy Rating (Eas) |
220 mJ |
Recovery Time |
39 ns |
Height |
4.826mm |
Length |
10.668mm |
Width |
9.65mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Contains Lead |