Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2001 |
Series | HEXFET® |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | Through Hole |
ECCN Code | EAR99 |
Resistance | 7MOhm |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 30V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 116A |
Lead Pitch | 2.54mm |
Number of Elements | 1 |
Power Dissipation-Max | 180W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 130W |
Case Connection | DRAIN |
Turn On Delay Time | 11 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 7m Ω @ 60A, 10V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 3290pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 116A Tc |
Gate Charge (Qg) (Max) @ Vgs | 60nC @ 4.5V |
Rise Time | 160ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±16V |
Fall Time (Typ) | 66 ns |
Turn-Off Delay Time | 23 ns |
Continuous Drain Current (ID) | 116A |
Threshold Voltage | 1V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 16V |
Drain Current-Max (Abs) (ID) | 75A |
Drain to Source Breakdown Voltage | 30V |
Pulsed Drain Current-Max (IDM) | 400A |
Dual Supply Voltage | 30V |
Avalanche Energy Rating (Eas) | 290 mJ |
Recovery Time | 84 ns |
Nominal Vgs | 1 V |
Height | 15.24mm |
Length | 10.5156mm |
Width | 4.69mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead, Lead Free |