Parameters | |
---|---|
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 55V |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | 104A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 200W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 200W |
Case Connection | DRAIN |
Turn On Delay Time | 12 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 8m Ω @ 54A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 5000pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 104A Tc |
Gate Charge (Qg) (Max) @ Vgs | 130nC @ 5V |
Rise Time | 160ns |
Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
Vgs (Max) | ±16V |
Fall Time (Typ) | 84 ns |
Turn-Off Delay Time | 43 ns |
Continuous Drain Current (ID) | 104A |
Threshold Voltage | 2V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 16V |
Drain Current-Max (Abs) (ID) | 90A |
Drain to Source Breakdown Voltage | 55V |
Dual Supply Voltage | 55V |
Avalanche Energy Rating (Eas) | 500 mJ |
Recovery Time | 210 ns |
Nominal Vgs | 2 V |
Height | 15.24mm |
Length | 10.5156mm |
Width | 4.69mm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2004 |
Series | HEXFET® |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | Through Hole |
ECCN Code | EAR99 |
Resistance | 8mOhm |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE |