IRL2910PBF
| Parameters | |
|---|---|
| Power Dissipation | 200W |
| Case Connection | DRAIN |
| Turn On Delay Time | 11 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 26m Ω @ 29A, 10V |
| Factory Lead Time | 1 Week |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3700pF @ 25V |
| Contact Plating | Tin |
| Current - Continuous Drain (Id) @ 25°C | 55A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 140nC @ 5V |
| Mount | Through Hole |
| Rise Time | 100ns |
| Mounting Type | Through Hole |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
| Vgs (Max) | ±16V |
| Package / Case | TO-220-3 |
| Fall Time (Typ) | 55 ns |
| Number of Pins | 3 |
| Turn-Off Delay Time | 49 ns |
| Transistor Element Material | SILICON |
| Continuous Drain Current (ID) | 55A |
| Threshold Voltage | 2V |
| JEDEC-95 Code | TO-220AB |
| Operating Temperature | -55°C~175°C TJ |
| Gate to Source Voltage (Vgs) | 16V |
| Drain Current-Max (Abs) (ID) | 48A |
| Packaging | Tube |
| Drain to Source Breakdown Voltage | 100V |
| Dual Supply Voltage | 100V |
| Published | 1998 |
| Avalanche Energy Rating (Eas) | 520 mJ |
| Recovery Time | 350 ns |
| Series | HEXFET® |
| Nominal Vgs | 2 V |
| Height | 8.77mm |
| Length | 10.5156mm |
| Width | 4.69mm |
| Part Status | Active |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free | Contains Lead, Lead Free |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 100V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 55A |
| Lead Pitch | 2.54mm |
| Number of Elements | 1 |
| Power Dissipation-Max | 200W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
See Relate Datesheet
