Parameters | |
---|---|
Part Status | Discontinued |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Power Dissipation-Max | 3.8W Ta 200W Tc |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 26m Ω @ 29A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 3700pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 55A Tc |
Gate Charge (Qg) (Max) @ Vgs | 140nC @ 5V |
Drain to Source Voltage (Vdss) | 100V |
Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
Vgs (Max) | ±16V |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2003 |
Series | HEXFET® |