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IRL3103STRLPBF

MOSFET N-CH 30V 64A D2PAK


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRL3103STRLPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 393
  • Description: MOSFET N-CH 30V 64A D2PAK (Kg)

Details

Tags

Parameters
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET®
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 12MOhm
Additional Feature AVALANCHE RATED
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 64A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 94W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 110W
Case Connection DRAIN
Turn On Delay Time 8.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12m Ω @ 34A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1650pF @ 25V
Current - Continuous Drain (Id) @ 25°C 64A Tc
Gate Charge (Qg) (Max) @ Vgs 33nC @ 4.5V
Rise Time 120ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 9.1 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 64A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 220A
Height 4.826mm
Length 10.668mm
Width 9.65mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 1 Week
See Relate Datesheet

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