Parameters | |
---|---|
Width | 4.69mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead, Lead Free |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 1997 |
Series | HEXFET® |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | Through Hole |
ECCN Code | EAR99 |
Resistance | 12mOhm |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 55V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 89A |
Lead Pitch | 2.54mm |
Number of Elements | 1 |
Power Dissipation-Max | 170W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 130W |
Case Connection | DRAIN |
Turn On Delay Time | 12 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 10m Ω @ 46A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 3600pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 89A Tc |
Gate Charge (Qg) (Max) @ Vgs | 98nC @ 5V |
Rise Time | 140ns |
Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
Vgs (Max) | ±16V |
Fall Time (Typ) | 78 ns |
Turn-Off Delay Time | 37 ns |
Continuous Drain Current (ID) | 89A |
Threshold Voltage | 2V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 16V |
Drain Current-Max (Abs) (ID) | 77A |
Drain to Source Breakdown Voltage | 55V |
Dual Supply Voltage | 55V |
Recovery Time | 140 ns |
Nominal Vgs | 2 V |
Height | 8.77mm |
Length | 10.5156mm |