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IRL3705ZSTRLPBF

MOSFET N-CH 55V 75A D2PAK


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRL3705ZSTRLPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 565
  • Description: MOSFET N-CH 55V 75A D2PAK (Kg)

Details

Tags

Parameters
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 130W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 130W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 52A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2880pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 5V
Rise Time 240ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 83 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 86A
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 75A
Drain to Source Breakdown Voltage 55V
Height 4.699mm
Length 10.668mm
Width 9.65mm
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Radiation Hardening No
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
RoHS Status ROHS3 Compliant
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET®
Lead Free Lead Free
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 8MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
See Relate Datesheet

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