Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Supplier Device Package | D2PAK |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2003 |
Series | HEXFET® |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Resistance | 16mOhm |
Max Operating Temperature | 175°C |
Min Operating Temperature | -55°C |
Voltage - Rated DC | 20V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 36A |
Number of Elements | 1 |
Power Dissipation-Max | 35W Tc |
Element Configuration | Single |
Power Dissipation | 35W |
Turn On Delay Time | 6 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 16mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id | 2.55V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 36A Tc |
Gate Charge (Qg) (Max) @ Vgs | 7.2nC @ 4.5V |
Rise Time | 13ns |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 5 ns |
Turn-Off Delay Time | 10 ns |
Continuous Drain Current (ID) | 36A |
Threshold Voltage | 2.1V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 20V |
Dual Supply Voltage | 20V |
Input Capacitance | 550pF |
Recovery Time | 12 ns |
Drain to Source Resistance | 16mOhm |
Rds On Max | 16 mΩ |
Nominal Vgs | 2.1 V |
Height | 4.699mm |
Length | 10.668mm |
Width | 9.65mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |