Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Supplier Device Package | TO-220AB |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2004 |
Series | HEXFET® |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Resistance | 4Ohm |
Max Operating Temperature | 175°C |
Min Operating Temperature | -55°C |
Voltage - Rated DC | 20V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 180A |
Power Dissipation-Max | 210W Tc |
Element Configuration | Single |
Power Dissipation | 210W |
Turn On Delay Time | 18 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 4mOhm @ 90A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 5090pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 180A Tc |
Gate Charge (Qg) (Max) @ Vgs | 79nC @ 4.5V |
Rise Time | 140ns |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 36 ns |
Turn-Off Delay Time | 38 ns |
Continuous Drain Current (ID) | 180A |
Threshold Voltage | 3V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 20V |
Dual Supply Voltage | 20V |
Input Capacitance | 5.09nF |
Drain to Source Resistance | 4.8mOhm |
Rds On Max | 4 mΩ |
Nominal Vgs | 3 V |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |