Parameters | |
---|---|
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 3.8W Ta 200W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 6m Ω @ 71A, 10V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 5000pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 140A Tc |
Gate Charge (Qg) (Max) @ Vgs | 140nC @ 4.5V |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±16V |
Drain Current-Max (Abs) (ID) | 140A |
Drain-source On Resistance-Max | 0.006Ohm |
Pulsed Drain Current-Max (IDM) | 470A |
DS Breakdown Voltage-Min | 30V |
Avalanche Energy Rating (Eas) | 610 mJ |
RoHS Status | Non-RoHS Compliant |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2002 |
Series | HEXFET® |