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IRL40B212

IRL40B212 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRL40B212
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 797
  • Description: IRL40B212 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Turn-Off Delay Time 88 ns
Continuous Drain Current (ID) 195A
Threshold Voltage 2.4V
Gate to Source Voltage (Vgs) 20V
Height 16.51mm
Length 10.67mm
Width 4.83mm
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series HEXFET®, StrongIRFET™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 231W Tc
Element Configuration Single
Turn On Delay Time 39 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.9m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 2.4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 8320pF @ 25V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 137nC @ 4.5V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
See Relate Datesheet

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