Parameters | |
---|---|
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Power Dissipation-Max | 143W Tc |
Element Configuration | Single |
Turn On Delay Time | 21 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 2.7m Ω @ 98A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds | 5225pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 120A Tc |
Gate Charge (Qg) (Max) @ Vgs | 84nC @ 4.5V |
Drain to Source Voltage (Vdss) | 40V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Turn-Off Delay Time | 63 ns |
Continuous Drain Current (ID) | 120A |
Threshold Voltage | 2.4V |
Gate to Source Voltage (Vgs) | 20V |
Height | 16.51mm |
Length | 10.67mm |
Width | 4.83mm |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Lead Free | Lead Free |
Mount | Surface Mount, Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2013 |
Series | HEXFET®, StrongIRFET™ |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |