Parameters | |
---|---|
Power Dissipation-Max | 150W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 150W |
Turn On Delay Time | 8.5 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 77m Ω @ 17A, 5V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2200pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 28A Tc |
Gate Charge (Qg) (Max) @ Vgs | 64nC @ 5V |
Rise Time | 170ns |
Drain to Source Voltage (Vdss) | 100V |
Drive Voltage (Max Rds On,Min Rds On) | 4V 5V |
Vgs (Max) | ±10V |
Fall Time (Typ) | 80 ns |
Turn-Off Delay Time | 35 ns |
Continuous Drain Current (ID) | 28A |
Threshold Voltage | 2V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 10V |
Avalanche Energy Rating (Eas) | 440 mJ |
Recovery Time | 260 ns |
Nominal Vgs | 2 V |
Height | 8.76mm |
Length | 10.54mm |
Width | 4.7mm |
Radiation Hardening | No |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Weight | 6.000006g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2011 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 77mOhm |
Terminal Finish | MATTE TIN |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
Technology | MOSFET (Metal Oxide) |
Pin Count | 3 |
Number of Elements | 1 |
Number of Channels | 1 |