IRL60HS118
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | 6-VDFN Exposed Pad |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Manufacturer Package Identifier | PG-TSDSON-6 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | S-PDSO-N6 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 11.5W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Case Connection | DRAIN |
| Turn On Delay Time | 8.4 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 17m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 10μA |
| Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 18.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 4.5V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 9 ns |
| Continuous Drain Current (ID) | 18.5A |
| Threshold Voltage | 1.7V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 56A |
| Avalanche Energy Rating (Eas) | 22 mJ |
| Max Junction Temperature (Tj) | 175°C |
| Height | 1mm |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
