IRL8114PBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2015 |
| Series | HEXFET® |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Power Dissipation-Max | 115W Tc |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 4.5m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id | 2.25V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2660pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 90A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 90A |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
