IRLB3813PBF
| Parameters | |
|---|---|
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 230W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 230W |
| Case Connection | DRAIN |
| Turn On Delay Time | 36 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.95m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds | 8420pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 260A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 86nC @ 4.5V |
| Rise Time | 170ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 60 ns |
| Turn-Off Delay Time | 33 ns |
| Continuous Drain Current (ID) | 260A |
| Threshold Voltage | 1.9V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 120A |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 1050A |
| Dual Supply Voltage | 30V |
| Avalanche Energy Rating (Eas) | 520 mJ |
| Recovery Time | 36 ns |
| Nominal Vgs | 1.9 V |
| Height | 9.02mm |
| Length | 10.668mm |
| Width | 4.826mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2009 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Resistance | 1.95MOhm |
See Relate Datesheet
