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IRLB8748PBF

Single N-Channel 30 V 4.8 mOhm 15 nC HEXFET® Power Mosfet - TO-220-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRLB8748PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 709
  • Description: Single N-Channel 30 V 4.8 mOhm 15 nC HEXFET® Power Mosfet - TO-220-3 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 4.8MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 75W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 75W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.8m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2139pF @ 15V
Current - Continuous Drain (Id) @ 25°C 78A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 4.5V
Rise Time 96ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 34 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 92A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 78A
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Recovery Time 35 ns
Nominal Vgs 1.8 V
Height 16.51mm
Length 10.668mm
Width 4.826mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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