IRLD014PBF
| Parameters | |
|---|---|
| Element Configuration | Single |
| Power Dissipation | 1.3W |
| Turn On Delay Time | 9.3 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 1A, 5V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 8.4nC @ 5V |
| Rise Time | 110ns |
| Factory Lead Time | 1 Week |
| Drain to Source Voltage (Vdss) | 60V |
| Mount | Through Hole |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 5V |
| Vgs (Max) | ±10V |
| Fall Time (Typ) | 110 ns |
| Mounting Type | Through Hole |
| Turn-Off Delay Time | 17 ns |
| Continuous Drain Current (ID) | 1.7A |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 10V |
| Package / Case | 4-DIP (0.300, 7.62mm) |
| Drain to Source Breakdown Voltage | 60V |
| Input Capacitance | 400pF |
| Recovery Time | 130 ns |
| Drain to Source Resistance | 200mOhm |
| Rds On Max | 200 mΩ |
| Number of Pins | 4 |
| Height | 3.3782mm |
| Length | 6.2738mm |
| Width | 5.0038mm |
| Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2014 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 200mOhm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 1.7A |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.3W Ta |
See Relate Datesheet
