IRLHS6242TRPBF
| Parameters | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10A Ta 12A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 4.5V |
| Rise Time | 15ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 13 ns |
| Turn-Off Delay Time | 19 ns |
| Continuous Drain Current (ID) | 10A |
| Threshold Voltage | 800mV |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 20V |
| Pulsed Drain Current-Max (IDM) | 88A |
| Nominal Vgs | 800 mV |
| Height | 950μm |
| Length | 2.1mm |
| Width | 2.1mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-PowerVDFN |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.98W Ta 9.6W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 9.6W |
| Case Connection | DRAIN |
| Turn On Delay Time | 5.8 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 11.7m Ω @ 8.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 10μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1110pF @ 10V |
See Relate Datesheet
