IRLI3705NPBF
| Parameters | |
|---|---|
| Gate to Source Voltage (Vgs) | 16V |
| Drain to Source Breakdown Voltage | 55V |
| Dual Supply Voltage | 55V |
| Recovery Time | 140 ns |
| Isolation Voltage | 2kV |
| Nominal Vgs | 2 V |
| Height | 9.8mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 1997 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 12mOhm |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Additional Feature | AVALANCHE RATED |
| Voltage - Rated DC | 57V |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 52A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 58W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 47W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 12 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 10m Ω @ 28A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3600pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 52A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 98nC @ 5V |
| Rise Time | 140ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 78 ns |
| Turn-Off Delay Time | 37 ns |
| Continuous Drain Current (ID) | 52A |
| Threshold Voltage | 2V |
| JEDEC-95 Code | TO-220AB |
See Relate Datesheet
