Parameters | |
---|---|
Gate Charge (Qg) (Max) @ Vgs | 140nC @ 4.5V |
Rise Time | 230ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±16V |
Fall Time (Typ) | 35 ns |
Turn-Off Delay Time | 29 ns |
Continuous Drain Current (ID) | 76A |
Gate to Source Voltage (Vgs) | 16V |
Drain to Source Breakdown Voltage | 30V |
Input Capacitance | 5nF |
Drain to Source Resistance | 9mOhm |
Rds On Max | 6 mΩ |
Nominal Vgs | 1 V |
Height | 16.12mm |
Length | 10.6172mm |
Width | 4.826mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Number of Pins | 3 |
Supplier Device Package | TO-220AB Full-Pak |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2004 |
Series | HEXFET® |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Resistance | 6MOhm |
Max Operating Temperature | 175°C |
Min Operating Temperature | -55°C |
Voltage - Rated DC | 30V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 67A |
Number of Elements | 1 |
Power Dissipation-Max | 63W Tc |
Element Configuration | Single |
Power Dissipation | 48W |
Turn On Delay Time | 14 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 6mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 5000pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 76A Tc |