Parameters | |
---|---|
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 1999 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Resistance | 200mOhm |
Additional Feature | AVALANCHE RATED, ULTRA LOW RESISTANCE |
Voltage - Rated DC | 55V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Current Rating | 2A |
JESD-30 Code | R-PDSO-G4 |
Number of Elements | 1 |
Power Dissipation-Max | 1W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.1W |
Case Connection | DRAIN |
Turn On Delay Time | 5.1 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 140m Ω @ 2A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 230pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 2A Ta |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
Rise Time | 4.9ns |
Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
Vgs (Max) | ±16V |
Fall Time (Typ) | 2.9 ns |
Turn-Off Delay Time | 14 ns |
Continuous Drain Current (ID) | 2A |
Threshold Voltage | 2V |
Gate to Source Voltage (Vgs) | 16V |
Drain Current-Max (Abs) (ID) | 2A |
Drain to Source Breakdown Voltage | 55V |
Dual Supply Voltage | 55V |
Recovery Time | 61 ns |
Nominal Vgs | 2 V |
Height | 1.4478mm |
Length | 6.6802mm |
Width | 3.7mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |