IRLL014TRPBF
| Parameters | |
|---|---|
| Vgs (Max) | ±10V |
| Fall Time (Typ) | 26 ns |
| Turn-Off Delay Time | 17 ns |
| Resistance | 200mOhm |
| Continuous Drain Current (ID) | 2.7A |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 10V |
| Drain to Source Breakdown Voltage | 60V |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Nominal Vgs | 1 V |
| Height | 1.8mm |
| Length | 6.7mm |
| Technology | MOSFET (Metal Oxide) |
| Width | 3.7mm |
| Radiation Hardening | No |
| Terminal Position | DUAL |
| REACH SVHC | Unknown |
| Factory Lead Time | 1 Week |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Terminal Form | GULL WING |
| Mount | Surface Mount |
| Peak Reflow Temperature (Cel) | 260 |
| Mounting Type | Surface Mount |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Package / Case | TO-261-4, TO-261AA |
| Pin Count | 4 |
| Number of Pins | 4 |
| JESD-30 Code | R-PDSO-G3 |
| Number of Elements | 1 |
| Weight | 250.212891mg |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Transistor Element Material | SILICON |
| Voltage | 55V |
| Operating Temperature | -55°C~150°C TJ |
| Power Dissipation-Max | 2W Ta 3.1W Tc |
| Packaging | Tape & Reel (TR) |
| Current | 2A |
| Published | 2011 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Case Connection | DRAIN |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Turn On Delay Time | 9.3 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 200m Ω @ 1.6A, 5V |
| Number of Terminations | 3 |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 8.4nC @ 5V |
| Rise Time | 110ns |
| ECCN Code | EAR99 |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 5V |
See Relate Datesheet
