IRLL024ZPBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 3 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 1999 |
| Series | HEXFET® |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Resistance | 60MOhm |
| Voltage - Rated DC | 55V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 5A |
| Number of Elements | 1 |
| Power Dissipation-Max | 1W Ta |
| Element Configuration | Single |
| Power Dissipation | 2.8W |
| Turn On Delay Time | 8.6 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 60m Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 5V |
| Rise Time | 33ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 5A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 16V |
| Drain to Source Breakdown Voltage | 55V |
| Dual Supply Voltage | 55V |
| Nominal Vgs | 3 V |
| Height | 1.4478mm |
| Length | 6.6802mm |
| Width | 3.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
See Relate Datesheet
