Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 1997 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Resistance | 40mOhm |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | LOGIC LEVEL COMPATIBLE |
Voltage - Rated DC | 55V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 3.8A |
Time@Peak Reflow Temperature-Max (s) | 30 |
JESD-30 Code | R-PDSO-G4 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.1W |
Case Connection | DRAIN |
Turn On Delay Time | 6.2 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 40m Ω @ 3.8A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 870pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 3.8A Ta |
Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
Rise Time | 12ns |
Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
Vgs (Max) | ±16V |
Fall Time (Typ) | 22 ns |
Turn-Off Delay Time | 35 ns |
Continuous Drain Current (ID) | 3.8A |
Threshold Voltage | 2V |
Gate to Source Voltage (Vgs) | 16V |
Drain Current-Max (Abs) (ID) | 5.2A |
Drain to Source Breakdown Voltage | 55V |
Dual Supply Voltage | 55V |
Recovery Time | 88 ns |
Max Junction Temperature (Tj) | 150°C |
Nominal Vgs | 2 V |
Height | 1.8mm |
Length | 6.6802mm |
Width | 6.7mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |