Parameters | |
---|---|
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 1W Ta |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 31m Ω @ 4.6A, 10V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 840pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 4.6A Ta |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±16V |
Drain Current-Max (Abs) (ID) | 4.6A |
Drain-source On Resistance-Max | 0.031Ohm |
Pulsed Drain Current-Max (IDM) | 37A |
DS Breakdown Voltage-Min | 30V |
Avalanche Energy Rating (Eas) | 140 mJ |
RoHS Status | Non-RoHS Compliant |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 1999 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Additional Feature | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | 30 |
JESD-30 Code | R-PDSO-G4 |
Qualification Status | Not Qualified |
Number of Elements | 1 |