Parameters | |
---|---|
Additional Feature | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY |
Fall Time (Typ) | 28 ns |
Subcategory | FET General Purpose Power |
Turn-Off Delay Time | 33 ns |
Voltage - Rated DC | 30V |
Technology | MOSFET (Metal Oxide) |
Continuous Drain Current (ID) | 4.6A |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Threshold Voltage | 1V |
Peak Reflow Temperature (Cel) | 260 |
Gate to Source Voltage (Vgs) | 16V |
Current Rating | 4.6A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Drain Current-Max (Abs) (ID) | 6.5A |
JESD-30 Code | R-PDSO-G4 |
Number of Elements | 1 |
Drain to Source Breakdown Voltage | 30V |
Dual Supply Voltage | 30V |
Power Dissipation-Max | 1W Ta |
Recovery Time | 98 ns |
Element Configuration | Single |
Nominal Vgs | 1 V |
Height | 1.8mm |
Operating Mode | ENHANCEMENT MODE |
Length | 6.6802mm |
Width | 3.7mm |
Radiation Hardening | No |
Power Dissipation | 2.1W |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead, Lead Free |
Case Connection | DRAIN |
Turn On Delay Time | 7.2 ns |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
FET Type | N-Channel |
Mount | Surface Mount |
Transistor Application | SWITCHING |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Number of Pins | 3 |
Rds On (Max) @ Id, Vgs | 31m Ω @ 4.6A, 10V |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 840pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 4.6A Ta |
Published | 1999 |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
Series | HEXFET® |
JESD-609 Code | e3 |
Rise Time | 22ns |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
ECCN Code | EAR99 |
Vgs (Max) | ±16V |
Resistance | 31mOhm |