IRLM120ATF
| Parameters | |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 250 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.7W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.7W |
| Case Connection | DRAIN |
| Turn On Delay Time | 5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 220m Ω @ 1.15A, 5V |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 4 days ago) |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 25V |
| Package / Case | TO-261-4, TO-261AA |
| Current - Continuous Drain (Id) @ 25°C | 2.3A Tc |
| Number of Pins | 4 |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 5V |
| Weight | 188mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Rise Time | 10ns |
| Drive Voltage (Max Rds On,Min Rds On) | 5V |
| Packaging | Tape & Reel (TR) |
| Vgs (Max) | ±20V |
| JESD-609 Code | e3 |
| Fall Time (Typ) | 9 ns |
| Turn-Off Delay Time | 19 ns |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Continuous Drain Current (ID) | 2.3A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.22Ohm |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Drain to Source Breakdown Voltage | 100V |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Terminal Finish | Tin (Sn) |
| Lead Free | Lead Free |
See Relate Datesheet
