Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 56MOhm |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | HIGH RELIABILITY |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Number of Elements | 1 |
Power Dissipation-Max | 1.3W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.3W |
Turn On Delay Time | 5.1 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 56m Ω @ 3.6A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 25μA |
Input Capacitance (Ciss) (Max) @ Vds | 266pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 3.6A Ta |
Gate Charge (Qg) (Max) @ Vgs | 3.9nC @ 4.5V |
Rise Time | 5.4ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±16V |
Fall Time (Typ) | 4.3 ns |
Turn-Off Delay Time | 6.4 ns |
Continuous Drain Current (ID) | 3.6A |
Threshold Voltage | 1.8V |
Gate to Source Voltage (Vgs) | 16V |
Drain to Source Breakdown Voltage | 40V |
Nominal Vgs | 1.8 V |
Height | 1.016mm |
Length | 3.0226mm |
Width | 1.397mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |