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IRLML2244TRPBF

MOSFET P-CH 20V 4.3A SOT23


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRLML2244TRPBF
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 818
  • Description: MOSFET P-CH 20V 4.3A SOT23 (Kg)

Details

Tags

Parameters
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 4.3A
Threshold Voltage -1.1V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Recovery Time 32 ns
Nominal Vgs -1.1 V
Height 1.02mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 95MOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 1.3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Turn On Delay Time 7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 54m Ω @ 4.3A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 16V
Current - Continuous Drain (Id) @ 25°C 4.3A Ta
Gate Charge (Qg) (Max) @ Vgs 6.9nC @ 4.5V
Rise Time 12ns
Drain to Source Voltage (Vdss) 20V
See Relate Datesheet

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