Parameters | |
---|---|
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 27MOhm |
Terminal Finish | Matte Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1.3W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.3W |
Turn On Delay Time | 4.9 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 21m Ω @ 6.3A, 4.5V |
Vgs(th) (Max) @ Id | 1.1V @ 10μA |
Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 16V |
Current - Continuous Drain (Id) @ 25°C | 6.3A Ta |
Gate Charge (Qg) (Max) @ Vgs | 8.9nC @ 4.5V |
Rise Time | 7.5ns |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±12V |
Fall Time (Typ) | 12 ns |
Turn-Off Delay Time | 19 ns |
Continuous Drain Current (ID) | 6.3A |
Threshold Voltage | 900mV |
Gate to Source Voltage (Vgs) | 12V |
Drain to Source Breakdown Voltage | 20V |
Recovery Time | 18 ns |
Max Junction Temperature (Tj) | 150°C |
Nominal Vgs | 12 V |
Height | 1.12mm |
Length | 3.04mm |
Width | 1.4mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Active |