Parameters | |
---|---|
Input Capacitance (Ciss) (Max) @ Vds | 830pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 4.3A Ta |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 5V |
Rise Time | 32ns |
Drain to Source Voltage (Vdss) | 12V |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
Vgs (Max) | ±8V |
Fall Time (Typ) | 210 ns |
Turn-Off Delay Time | 250 ns |
Continuous Drain Current (ID) | -4.3A |
Threshold Voltage | -550mV |
Gate to Source Voltage (Vgs) | 8V |
Drain to Source Breakdown Voltage | -12V |
Dual Supply Voltage | -12V |
Max Junction Temperature (Tj) | 150°C |
Nominal Vgs | -550 mV |
Height | 1.12mm |
Length | 3.0226mm |
Width | 1.397mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2003 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Resistance | 50mOhm |
Additional Feature | HIGH RELIABILITY |
Subcategory | Other Transistors |
Voltage - Rated DC | -12V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | -4.3A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1.3W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.3W |
Turn On Delay Time | 11 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 50m Ω @ 4.3A, 4.5V |
Vgs(th) (Max) @ Id | 950mV @ 250μA |