Parameters | |
---|---|
RoHS Status | ROHS3 Compliant |
Packaging | Tape & Reel (TR) |
Lead Free | Lead Free |
Published | 2011 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 64MOhm |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1.3W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.3W |
Turn On Delay Time | 9.6 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 64m Ω @ 3.6A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 10μA |
Input Capacitance (Ciss) (Max) @ Vds | 388pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 3.6A Ta |
Gate Charge (Qg) (Max) @ Vgs | 4.8nC @ 4.5V |
Rise Time | 19ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 15 ns |
Factory Lead Time | 1 Week |
Turn-Off Delay Time | 16 ns |
Continuous Drain Current (ID) | -3.6A |
Mount | Surface Mount |
Threshold Voltage | -2.4V |
Mounting Type | Surface Mount |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | -30V |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Recovery Time | 21 ns |
Number of Pins | 3 |
Max Junction Temperature (Tj) | 150°C |
Nominal Vgs | -1.3 V |
Height | 1.12mm |
Length | 3.0226mm |
Transistor Element Material | SILICON |
Manufacturer Package Identifier | IRLML9301TRPBF |
Width | 1.397mm |
Radiation Hardening | No |
Operating Temperature | -55°C~150°C TJ |
REACH SVHC | No SVHC |