IRLMS1902TRPBF
| Parameters | |
|---|---|
| Terminal Form | GULL WING |
| Current Rating | 3.2A |
| JESD-30 Code | R-PDSO-G6 |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.7W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.7W |
| Turn On Delay Time | 7 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 2.2A, 4.5V |
| Vgs(th) (Max) @ Id | 700mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 4.5V |
| Rise Time | 11ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.7V 4.5V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 4 ns |
| Turn-Off Delay Time | 12 ns |
| Continuous Drain Current (ID) | 3.2A |
| Threshold Voltage | 700mV |
| Factory Lead Time | 1 Week |
| Gate to Source Voltage (Vgs) | 12V |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Drain to Source Breakdown Voltage | 20V |
| Package / Case | SOT-23-6 |
| Number of Pins | 3 |
| Nominal Vgs | 700 mV |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Height | 1.143mm |
| Packaging | Tape & Reel (TR) |
| Length | 2.9972mm |
| Width | 1.75mm |
| Published | 2004 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Radiation Hardening | No |
| Part Status | Active |
| REACH SVHC | No SVHC |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| RoHS Status | ROHS3 Compliant |
| Number of Terminations | 6 |
| Lead Free | Lead Free |
| Resistance | 10Ohm |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Voltage - Rated DC | 20V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
See Relate Datesheet
