Parameters | |
---|---|
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 |
Surface Mount | YES |
Transistor Element Material | SILICON |
Packaging | Cut Tape (CT) |
Published | 2003 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | ULTRA-LOW RESISTANCE |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PDSO-G6 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Operating Mode | ENHANCEMENT MODE |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 30m Ω @ 6.5A, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1310pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 6.5A Ta |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 5V |
Drain to Source Voltage (Vdss) | 20V |
Drain Current-Max (Abs) (ID) | 6.5A |
Drain-source On Resistance-Max | 0.03Ohm |
Pulsed Drain Current-Max (IDM) | 20A |
DS Breakdown Voltage-Min | 20V |
RoHS Status | Non-RoHS Compliant |