Parameters |
Height |
2.52mm |
Length |
6.7056mm |
Width |
6.22mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Factory Lead Time |
1 Week |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2009 |
Series |
HEXFET® |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Resistance |
14MOhm |
Terminal Finish |
Matte Tin (Sn) - with Nickel (Ni) barrier |
Additional Feature |
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW ON RESISTANCE |
Subcategory |
FET General Purpose Power |
Technology |
MOSFET (Metal Oxide) |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
30 |
JESD-30 Code |
R-PSSO-G2 |
Number of Elements |
1 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Number of Channels |
1 |
Power Dissipation-Max |
140W Tc |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
140W |
Case Connection |
DRAIN |
Turn On Delay Time |
24 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
14m Ω @ 38A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds |
3980pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
42A Tc |
Gate Charge (Qg) (Max) @ Vgs |
48nC @ 4.5V |
Rise Time |
110ns |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±16V |
Fall Time (Typ) |
48 ns |
Turn-Off Delay Time |
33 ns |
Continuous Drain Current (ID) |
42A |
JEDEC-95 Code |
TO-252AA |
Gate to Source Voltage (Vgs) |
16V |
Drain to Source Breakdown Voltage |
100V |
Pulsed Drain Current-Max (IDM) |
250A |
Max Junction Temperature (Tj) |
175°C |