Parameters | |
---|---|
Height | 2.3876mm |
Length | 6.7056mm |
Width | 6.22mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2007 |
Series | HEXFET® |
Part Status | Discontinued |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Resistance | 4.9MOhm |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Power Dissipation-Max | 140W Tc |
Element Configuration | Single |
Power Dissipation | 140W |
Turn On Delay Time | 25 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 4.9m Ω @ 42A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds | 3810pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 42A Tc |
Gate Charge (Qg) (Max) @ Vgs | 56nC @ 4.5V |
Rise Time | 140ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±16V |
Fall Time (Typ) | 50 ns |
Turn-Off Delay Time | 33 ns |
Continuous Drain Current (ID) | 130A |
Threshold Voltage | 2.5V |
Gate to Source Voltage (Vgs) | 16V |
Drain to Source Breakdown Voltage | 40V |
Recovery Time | 45 ns |