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IRLR3636TRPBF

IRLR3636TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRLR3636TRPBF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 793
  • Description: IRLR3636TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Number of Channels 1
Voltage 60V
Power Dissipation-Max 143W Tc
Element Configuration Single
Current 50A
Operating Mode ENHANCEMENT MODE
Power Dissipation 143W
Case Connection DRAIN
Turn On Delay Time 45 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.8m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3779pF @ 50V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 49nC @ 4.5V
Rise Time 216ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 69 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 99A
Threshold Voltage 2.5V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 60V
Max Junction Temperature (Tj) 175°C
Height 2.52mm
Length 6.7056mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
See Relate Datesheet

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