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IRLR3915TRPBF

MOSFET N-CH 55V 30A DPAK


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRLR3915TRPBF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 594
  • Description: MOSFET N-CH 55V 30A DPAK (Kg)

Details

Tags

Parameters
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 61A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 120W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 120W
Case Connection DRAIN
Turn On Delay Time 7.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1870pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V
Rise Time 51ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 100 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 30A
Threshold Voltage 3V
Factory Lead Time 1 Week
JEDEC-95 Code TO-252AA
Mount Surface Mount
Gate to Source Voltage (Vgs) 16V
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Drain to Source Breakdown Voltage 55V
Number of Pins 3
Pulsed Drain Current-Max (IDM) 240A
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Dual Supply Voltage 55V
Packaging Tape & Reel (TR)
Avalanche Energy Rating (Eas) 200 mJ
Published 2003
Series HEXFET®
Nominal Vgs 3 V
JESD-609 Code e3
Part Status Active
Height 2.26mm
Length 6.7056mm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Width 6.22mm
Number of Terminations 2
ECCN Code EAR99
Radiation Hardening No
Resistance 14mOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
REACH SVHC No SVHC
Subcategory FET General Purpose Power
RoHS Status ROHS3 Compliant
Voltage - Rated DC 55V
Lead Free Lead Free
Technology MOSFET (Metal Oxide)
See Relate Datesheet

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