IRLR8113PBF
| Parameters | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 94A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 4.5V |
| Rise Time | 3.8ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 94A |
| Threshold Voltage | 2.25V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Input Capacitance | 2.92nF |
| Recovery Time | 49 ns |
| Drain to Source Resistance | 7.4mOhm |
| Rds On Max | 6 mΩ |
| Height | 2.3876mm |
| Length | 6.7056mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Supplier Device Package | D-Pak |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 6MOhm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 30V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 94A |
| Number of Elements | 1 |
| Power Dissipation-Max | 89W Tc |
| Element Configuration | Single |
| Power Dissipation | 89W |
| Turn On Delay Time | 9.2 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.25V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2920pF @ 15V |
See Relate Datesheet
