Parameters | |
---|---|
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Supplier Device Package | D-Pak |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2005 |
Series | HEXFET® |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Max Operating Temperature | 175°C |
Min Operating Temperature | -55°C |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Power Dissipation-Max | 75W Tc |
Element Configuration | Single |
Power Dissipation | 75W |
Turn On Delay Time | 12 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 5.8mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id | 2.35V @ 50μA |
Input Capacitance (Ciss) (Max) @ Vds | 2150pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 86A Tc |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 4.5V |
Rise Time | 49ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 16 ns |
Turn-Off Delay Time | 15 ns |
Continuous Drain Current (ID) | 86A |
Gate to Source Voltage (Vgs) | 12V |
Drain to Source Breakdown Voltage | 30V |
Input Capacitance | 2.15nF |
Drain to Source Resistance | 5.8mOhm |
Rds On Max | 5.8 mΩ |
Height | 2.26mm |
Length | 6.7056mm |
Width | 6.22mm |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |