Parameters | |
---|---|
Current - Continuous Drain (Id) @ 25°C | 160A Tc |
Gate Charge (Qg) (Max) @ Vgs | 59nC @ 4.5V |
Rise Time | 35ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 17 ns |
Turn-Off Delay Time | 21 ns |
Continuous Drain Current (ID) | 160A |
Threshold Voltage | 1.9V |
JEDEC-95 Code | TO-252AA |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 30V |
Pulsed Drain Current-Max (IDM) | 640A |
Avalanche Energy Rating (Eas) | 250 mJ |
Nominal Vgs | 1.9 V |
Height | 2.3876mm |
Length | 6.7056mm |
Width | 6.22mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2007 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Discontinued |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Resistance | 3.1MOhm |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 135W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 135W |
Case Connection | DRAIN |
Turn On Delay Time | 19 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 3.1m Ω @ 25A, 10V |
Vgs(th) (Max) @ Id | 2.35V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds | 4880pF @ 15V |