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IRLS3034-7PPBF

MOSFET N-CH 40V 240A D2PAK-7


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRLS3034-7PPBF
  • Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
  • Datasheet: PDF
  • Stock: 158
  • Description: MOSFET N-CH 40V 240A D2PAK-7 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series HEXFET®
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 1.4MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G6
Number of Elements 1
Power Dissipation-Max 380W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 380W
Case Connection DRAIN
Turn On Delay Time 71 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4m Ω @ 200A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10990pF @ 40V
Current - Continuous Drain (Id) @ 25°C 240A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 4.5V
Rise Time 590ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 200 ns
Turn-Off Delay Time 94 ns
Continuous Drain Current (ID) 380A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 240A
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 1540A
Avalanche Energy Rating (Eas) 250 mJ
Height 4.699mm
Length 10.668mm
Width 9.65mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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