Parameters | |
---|---|
Power Dissipation | 375W |
Turn On Delay Time | 65 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 1.7m Ω @ 195A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 10315pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 195A Tc |
Gate Charge (Qg) (Max) @ Vgs | 162nC @ 4.5V |
Rise Time | 827ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 355 ns |
Turn-Off Delay Time | 97 ns |
Continuous Drain Current (ID) | 343A |
Threshold Voltage | 2.5V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 40V |
Height | 4.572mm |
Length | 10.668mm |
Width | 9.65mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2009 |
Series | HEXFET® |
Part Status | Discontinued |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Resistance | 1.7MOhm |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Power Dissipation-Max | 375W Tc |
Element Configuration | Single |